Datasheet > CHM8311JGP

CHM8311JGP

更新时间： 2024-11-15 21:11:19

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
2页	211K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CHM8311JGP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CHM8311JGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM8311JGP

SURFACE MOUNT

Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 7.9 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SO-8

FEATURE

* Small flat package. (SO-8 )

(

)

4.06 0.160

* Super high dense cell design for extremely low RDS(ON).

(

3.70 0.146

* High power and current handing capability.

* Lead free product is acquired.

(

)

.51 0.020

(0.012)

.10

(

)

5.00 0.197

CONSTRUCTION

(

)

4.69 0.185

( )BSC

1.27 0.05

* P-Channel Enhancement

(0.069)

1.75

(

)

.25 0.010

(

)

1.35 0.053

(0.007)

.17

(

)

.25 0.010

(0.002)

.05

(

)

6.20 0.244

D1 D1 D2 D2

(

)

5.80 0.228

CIRCUIT

Dimensions in millimeters

SO-8

S1 G1 S2

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM8311JGP

Units

V_DSS

Drain-Source Voltage

-30

V_GSS

Gate-Source Voltage

±20

Maximum Drain Current - Continuous

- Pulsed

-7.9

I_D

(Note 3)

-31.6

P_D

T_J

2000

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

2006-02

中文翻译

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