Datasheet > CHM6338JPT

CHM6338JPT

更新时间： 2024-09-26 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	268K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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CHM6338JPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM6338JPT

SURFACE MOUNT

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 5.2 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SO-8

FEATURE

* Small flat package. (SO-8 )

(

)

4.06 0.160

* High density cell design for extremely low RDS(ON).

(

)

3.70 0.146

* Rugged and reliable.

* High saturation current capability.

(

)

.51 0.020

(0.012)

.10

(

)

5.00 0.197

CONSTRUCTION

(

)

4.69 0.185

( )BSC

1.27 0.05

* N-Channel Enhancement

(0.069)

1.75

(

)

.25 0.010

(

)

1.35 0.053

(0.007)

.17

(

)

.25 0.010

(0.002)

.05

(

)

6.20 0.244

D1 D1 D2 D2

(

)

5.80 0.228

CIRCUIT

Dimensions in millimeters

SO-8

S1 G1 S2

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM6338JPT

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

Maximum Drain Current - Continuous

- Pulsed

5.2

I_D

(Note 3)

P_D

T_J

2000

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

2005-02

中文翻译

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