Datasheet > CHM630PAPT

CHM630PAPT

更新时间： 2024-01-11 07:16:11

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	185K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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CHM630PAPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM630PAPT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 200 Volts CURRENT 7.8 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

TO-252A

FEATURE

* Small package. (TO-252A)

.280 (7.10)

.238 (6.05)

* Super high dense cell design for extremely low RDS(ON).

.094 (2.40)

.087 (2.20)

.035 (0.89)

.220 (5.59)

.195 (4.95)

* High power and current handing capability.

.018 (0.45)

CONSTRUCTION

* N-Channel Enhancement

(1)

(3) (2)

.024 (0.61)

.016 (0.40)

.035 (0.90)

.025 (0.64)

.102 (2.59)

.078 (1.98)

1 Gate

2 Source

3 Drain( Heat Sink )

(3)

CIRCUIT

(1)

Dimensions in inches and (millimeters)

TO-252A

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM630PAPT

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

200

V_GSS

±20

Maximum Drain Current - Continuous

- Pulsed

7.8

I_D

(Note 3)

31.2

P_D

T_J

°C

Maximum Power Dissipation at Tc = 25°C

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

°C/W

2006-02

中文翻译

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