Datasheet > CHM5P03PAPT

CHM5P03PAPT

更新时间： 2024-02-10 17:26:19

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	169K
描述
P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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CHM5P03PAPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM5P03PAPT

SURFACE MOUNT

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 15 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

TO-252A

FEATURE

* Small flat package. ( TO-252A )

.280 (7.10)

.238 (6.05)

* High density cell design for extremely low RDS(ON).

.094 (2.40)

.087 (2.20)

.035 (0.89)

.220 (5.59)

.195 (4.95)

* Rugged and reliable.

.018 (0.45)

CONSTRUCTION

* P-Channel Enhancement

(1)

(3) (2)

.024 (0.61)

.016 (0.40)

.035 (0.90)

.025 (0.64)

.102 (2.59)

.078 (1.98)

1 Gate

2 Source

3 Drain( Heat Sink )

CIRCUIT

Dimensions in inches and (millimeters)

TO-252A

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM5P03PAPT

Units

V_DSS

Drain-Source Voltage

-30

V_GSS

Gate-Source Voltage

±20

Maximum Drain Current - Continuous

- Pulsed

-15

-45

I_D

(Note 3)

P_D

T_J

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

°C/W

2006-02

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