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CHM3178JPT PDF预览

CHM3178JPT

更新时间: 2024-11-13 06:47:43
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 296K
描述
N-Channel Enhancement Mode Field Effect Transistor

CHM3178JPT 数据手册

 浏览型号CHM3178JPT的Datasheet PDF文件第2页浏览型号CHM3178JPT的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHM3178JPT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 30 Volts CURRENT 7.8 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
SO-8  
FEATURE  
* Small flat package. (SO-8 )  
(
)
)
4.06 0.160  
* Super high dense cell design for extremely low RDS(ON).  
(
3.70 0.146  
* High power and current handing capability.  
* Lead free product is acquired.  
8
(
)
.51 0.020  
1
4
(0.012)  
.10  
(
)
5.00 0.197  
CONSTRUCTION  
(
)
4.69 0.185  
( )BSC  
1.27 0.05  
* N-Channel Enhancement  
5
(0.069)  
1.75  
(
)
.25 0.010  
(
)
1.35 0.053  
(0.007)  
.17  
(
)
.25 0.010  
(0.002)  
.05  
(
)
6.20 0.244  
D1 D1 D2 D2  
(
)
5.80 0.228  
8
1
5
CIRCUIT  
Dimensions in millimeters  
SO-8  
4
S1 G1 S2  
G2  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
CHM3178JPT  
Units  
VDSS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VGSS  
±20  
V
Maximum Drain Current - Continuous  
- Pulsed  
7.8  
ID  
A
(Note 3)  
30  
PD  
TJ  
2000  
mW  
°C  
Maximum Power Dissipation  
Operating Temperature Range  
-55 to 150  
-55 to 150  
Storage Temperature Range  
STG  
T
°C  
Note : 1. Surface Mounted on FR4 Board , t <=10sec  
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%  
3. Repetitive Rating , Pulse width linited by maximum junction temperature  
4. Guaranteed by design , not subject to production trsting  
Thermal characteristics  
(Note 1)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
°C/W  
2006-09  

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