Datasheet > CHM3055LXPT

CHM3055LXPT

更新时间： 2024-11-13 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	335K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CHM3055LXPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM3055LXPT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 3.7 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-62/SOT-89

FEATURE

* Small package. (SC-62/SOT-89 )

* High density cell design for extremely low RDS(ON).

4.6MAX.

1.7MAX.

1.6MAX.

0.4+0.05

* Rugged and reliable.

CONSTRUCTION

* N-Channel Enhancement

+0.08

0.45-0.05

+0.08

0.40-0.05

1.50+0.1

1 Gate

(3)

2 Drain

CIRCUIT

3 Source

(1)

Dimensions in millimeters

SC-62/SOT-89

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM3055LXPT

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

Maximum Drain Current - Continuous

- Pulsed

3.7

I_D

(Note 3)

P_D

T_J

3000

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

°C/W

2006-01

12 3

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