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CHM2316QPT PDF预览

CHM2316QPT

更新时间: 2024-11-13 06:47:43
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 351K
描述
N-Channel Enhancement Mode Field Effect Transistor

CHM2316QPT 数据手册

 浏览型号CHM2316QPT的Datasheet PDF文件第2页浏览型号CHM2316QPT的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHM2316QPT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 30 Volts CURRENT 6 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
SC-74/SOT-457  
FEATURE  
* Small flat package. (SC-74/SOT-457)  
* High density cell design for extremely low RDS(ON).  
* Rugged and reliable.  
(1)  
(3)  
(6)  
* High saturation current capability.  
0.95  
0.95  
1.7~2.1  
2.7~3.1  
CONSTRUCTION  
(4)  
* N-Channel Enhancement  
0.25~0.5  
1.4~1.8  
0.08~0.2  
0.935~1.3  
0~0.15  
0.3~0.6  
D
D
D
D
S
6
1
4
3
2.6~3.0  
CIRCUIT  
SC-74/SOT-457  
Dimensions in millimeters  
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
CHM2316QPT  
Units  
VDSS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VGSS  
±20  
V
Maximum Drain Current - Continuous  
- Pulsed  
6.0  
24  
ID  
A
(Note 3)  
PD  
TJ  
2000  
mW  
°C  
Maximum Power Dissipation  
Operating Temperature Range  
-55 to 150  
-55 to 150  
Storage Temperature Range  
STG  
T
°C  
Note : 1. Surface Mounted on FR4 Board , t <=5sec  
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%  
3. Repetitive Rating , Pulse width linited by maximum junction temperature  
4. Guaranteed by design , not subject to production trsting  
Thermal characteristics  
(Note 1)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
°C/W  
2006-08  

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