Datasheet > CHM2310GP

CHM2310GP

更新时间： 2024-11-13 21:21:47

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
3页	420K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CHM2310GP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

CHM2310GP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM2310GP

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.8 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-59/SOT-346

FEATURE

* Small flat package. (SC-59 )

* High density cell design for extremely low RDS(ON).

* Rugged and reliable.

* High saturation current capability.

(2)

(3)

0.95

1.9±0.2

0.4±

2.9±0.2

(1) 0.95

CONSTRUCTION

0.1

0.05

* N-Channel Enhancement

0.2

1.6±

0.1

MARKING

* 10

0.2

1.1±

0.1

0.15±

0.06

0.8±0.1

0~0.1

0.3~0.6

(3)

CIRCUIT

2.8±0.2

(1)

Dimensions in inches and (millimeters)

SC-59/SOT-346

(2)

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM2310GP

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±12

Maximum Drain Current - Continuous

- Pulsed

4.8

I_D

(Note 3)

20.0

P_D

T_J

1250

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

100

°C/W

2006-08

12 3

中文翻译

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