Datasheet > CHM2308ESPT

CHM2308ESPT

更新时间： 2024-09-25 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	384K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册

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CHM2308ESPT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Base Number Matches：	1

CHM2308ESPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHM2308ESPT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 5.4 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-59/SOT-346

FEATURE

* Small flat package. (SC-59 )

* High density cell design for extremely low RDS(ON).

* Rugged and reliable.

(2)

* High saturation current capability.

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

* ESD per HBM 2KV

0.3~0.51

CONSTRUCTION

1.2~1.9

* N-Channel Enhancement

0.89~1.3

0.085~0.2

0~0.1

0.3~0.6

CIRCUIT

2.1~2.95

Dimensions in millimeters

SC-59/SOT-346

_S2

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM2308ESPT

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±12

Maximum Drain Current - Continuous

- Pulsed

5.4

I_D

(Note 3)

22.0

P_D

T_J

1250

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

100

°C/W

2006-08

12 3

中文翻译

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