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CHM21A3PAPT PDF预览

CHM21A3PAPT

更新时间: 2024-11-13 09:24:55
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
2页 184K
描述
N-Channel Enhancement Mode Field Effect Transistor

CHM21A3PAPT 数据手册

 浏览型号CHM21A3PAPT的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
CHM21A3PAPT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 30 Volts CURRENT 20 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
TO-252A  
FEATURE  
* Small package. (TO-252A)  
.280 (7.10)  
.238 (6.05)  
* Super high dense cell design for extremely low RDS(ON).  
.094 (2.40)  
.087 (2.20)  
.035 (0.89)  
.220 (5.59)  
.195 (4.95)  
* High power and current handing capability.  
.018 (0.45)  
CONSTRUCTION  
* N-Channel Enhancement  
(1)  
(3) (2)  
.024 (0.61)  
.016 (0.40)  
.035 (0.90)  
.025 (0.64)  
.102 (2.59)  
.078 (1.98)  
1 Gate  
2 Source  
3 Drain( Heat Sink )  
D
(3)  
CIRCUIT  
(1)  
G
Dimensions in inches and (millimeters)  
TO-252A  
(2)  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
CHM21A3PAPT  
Units  
VDSS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VGSS  
±20  
V
Maximum Drain Current - Continuous  
- Pulsed  
20  
ID  
A
(Note 3)  
45  
PD  
TJ  
38  
W
°C  
°C  
Maximum Power Dissipation at Tc = 25°C  
Operating Temperature Range  
-55 to 150  
-55 to 150  
Storage Temperature Range  
STG  
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec  
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%  
3. Repetitive Rating , Pulse width linited by maximum junction temperature  
4. Guaranteed by design , not subject to production trsting  
Thermal characteristics  
(Note 1)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
50  
°C/W  
2006-02  

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