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2N7002VPTGP PDF预览

2N7002VPTGP

更新时间: 2024-01-21 12:18:55
品牌 Logo 应用领域
力勤 - CHENMKO /
页数 文件大小 规格书
5页 230K
描述
Transistor,

2N7002VPTGP 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002VPTGP 数据手册

 浏览型号2N7002VPTGP的Datasheet PDF文件第2页浏览型号2N7002VPTGP的Datasheet PDF文件第3页浏览型号2N7002VPTGP的Datasheet PDF文件第4页浏览型号2N7002VPTGP的Datasheet PDF文件第5页 
CHENMKO ENTERPRISE CO.,LTD  
2N7002DSPT  
SURFACE MOUNT  
Dual N-Channel Enhancement MOS FET  
VOLTAGE 50 Volts CURRENT 0.51 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
FEATURE  
* Small surface mounting type. (SC-74/SOT-457)  
SC-74/SOT-457  
* High density cell design for low RDS(ON)  
* Suitable for high packing density.  
* Rugged and reliable.  
.
(1)  
(3)  
(6)  
* High saturation current capability.  
* Voltage controlled small signal switch.  
0.95  
0.95  
1.7~2.1  
2.7~3.1  
(4)  
CONSTRUCTION  
* Dual N-Channel Enhancement  
MARKING  
0.25~0.5  
1.4~1.8  
* 72DS  
0.08~0.2  
0.935~1.3  
0~0.15  
0.3~0.6  
6
4
3
2.6~3.0  
CIRCUIT  
SC-74/SOT-457  
1
Dimensions in millimeters  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
2N7002DSPT  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
50  
50  
V
V
V
VDGR  
VGSS  
Drain-Gate Voltage (RGS < 1 M  
)
±20  
Gate-Source Voltage - Continuous  
510  
1500  
960  
ID  
Maximum Drain Current - Continuous  
- Pulsed  
TA= 25°C  
TA= 70°C  
TA= 25°C  
mA  
mW  
PD  
Maximum Power Dissipation  
TA= 70°C  
900  
mW  
°C  
TJ,TSTG  
TL  
Operating and Storage Temperature Range  
-55 to 150  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
300  
°C  
Thermal characteristics  
R
Thermal Resistance, Junction-to-Ambient  
130  
60  
°C/W  
°C/W  
2004-7  
θJA  
R
θJC  
Thermal Resistance, Junction-to-Case  

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