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2N7002VPT PDF预览

2N7002VPT

更新时间: 2024-01-30 12:53:16
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
5页 166K
描述
Dual N-Channel Enhancement MOS FET

2N7002VPT 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002VPT 数据手册

 浏览型号2N7002VPT的Datasheet PDF文件第2页浏览型号2N7002VPT的Datasheet PDF文件第3页浏览型号2N7002VPT的Datasheet PDF文件第4页浏览型号2N7002VPT的Datasheet PDF文件第5页 
CHENMKO ENTERPRISE CO.,LTD  
2N7002VPT  
SURFACE MOUNT  
Dual N-Channel Enhancement MOS FET  
VOLTAGE 60 Volts CURRENT 0.280 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
FEATURE  
SOT-563  
* Small surface mounting type. (SOT-563)  
* High density cell design for low RDS(ON)  
* Suitable for high packing density.  
* Rugged and reliable.  
(1)  
(5)  
* High saturation current capability.  
* Voltage controlled small signal switch.  
0.50  
0.50  
0.9~1.1  
1.5~1.7  
(4)  
(3)  
0.15~0.3  
CONSTRUCTION  
1.1~1.3  
* Dual N-Channel Enhancement  
MARKING  
* V7  
0.5~0.6  
0.09~0.18  
(6)  
D1  
G2  
(4)  
S2  
1.5~1.7  
CIRCUIT  
SOT-563  
(3)  
(1)  
Dimensions in millimeters  
D2  
S1 G1  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
2N7002VPT  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
60  
V
60  
V
VDGR  
VGSS  
Drain-Gate Voltage (RGS < 1 M  
)
Gate-Source Voltage - Continuous  
±20  
V
- Non Repetitive (tp < 50µs)  
40  
±
ID  
mA  
mW  
°C  
280  
Maximum Drain Current - Continuous  
PD  
Power Dissipation  
Maximum  
250  
Operating and Storage Temperature Range  
-55 to 150  
TJ,TSTG  
TL  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
300  
°C  
Thermal characteristics  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
833  
°C/W  
2004-06  

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