2N7002SSPT

更新时间： 2024-02-26 00:31:11

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
5页	153K
描述
Dual N-Channel Enhancement MOS FET

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技术参数
数据手册

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2N7002SSPT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002SSPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002SSPT

SURFACE MOUNT

Dual N-Channel Enhancement MOS FET

VOLTAGE 50 Volts CURRENT 0.51 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

FEATURE

SC-88/SOT-363

* Small surface mounting type. (SC-88/SOT-363)

* High density cell design for low R^DS(ON)

* Suitable for high packing density.

* Rugged and reliable.

(1)

(G1)

(6)

(D1)

* High saturation current capability.

* Voltage controlled small signal switch.

(S2)

0.65

1.2~1.4

2.0~2.2

(S1)

0.65

(G2)

(3)

(D2)

(4)

CONSTRUCTION

0.15~0.35

1.15~1.35

* Dual N-Channel Enhancement

0.08~0.15

0.8~1.1

0~0.1

0.1 Min.

2.15~2.45

CIRCUIT

SC-88/SOT-363

Dimensions in millimeters

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002SSPT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 M

)

Ω

±20

Gate-Source Voltage - Continuous

510

1500

960

I_D

Maximum Drain Current - Continuous

- Pulsed

TA= 25°C

TA= 70°C

TA= 25°C

P_D

Maximum Power Dissipation

TA= 70°C

900

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

°C

Thermal characteristics

Thermal Resistance, Junction-to-Ambient

130

°C/W

2004-7

θJA

θJC

Thermal Resistance, Junction-to-Case

12 3 4 5

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