2N7002ESEPT

更新时间： 2024-02-02 05:37:21

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	448K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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2N7002ESEPT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002ESEPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2N7002ESEPT

SURFACE MOUNT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere

APPLICATION

* Relay driver

* High speed line driver

* Logic level transistor

SC-70/SOT-323

FEATURE

* Small surface mounting type. (SOT-23)

* High density cell design for low RDS(ON).

* Suitable for high packing density.

* Rugged and reliable.

0.65

1.3±0.1

2.0±0.2

0.65

* High saturation current capability.

* ESD protect in input gate 1.5KV

0.3±0.1

1.25±0.1

CONSTRUCTION

* N-Channel Enhancement with ESD protection in input

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

2.0~2.45

CIRCUIT

SC-70/SOT-323

Dimensions in millimeters

_S2

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

2N7002ESEPT

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 M

Gate-Source Voltage - Continuous

)

Ω

±²⁰

- Non Repetitive (tp < 50µs)

TA= 25°C

TA= 100°C

500

800

400

I_D

Maximum Drain Current - Continuous

- Pulsed

P_D

Maximum Power Dissipation

°C

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

Thermal characteristics

θJA

Thermal Resistance, Junction-to-Ambient

350

°C/W

2006-03

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