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B5819W PDF预览

B5819W

更新时间: 2024-01-19 06:33:00
品牌 Logo 应用领域
辰达行 - MDD 肖特基二极管
页数 文件大小 规格书
2页 71K
描述
SCHOTTKY DIODE Molded plastic body

B5819W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.64
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B5819W 数据手册

 浏览型号B5819W的Datasheet PDF文件第2页 
B5817W THRU B5819W  
SCHOTTKY DIODE  
SOD-123  
1.65(.065)  
1.55(.061)  
1.80(.071)  
1.40(.055)  
FEATURES  
For use in low voltage, high frequency inverters  
Free wheeling, and polanty protection applications  
3.86(0.152)  
3.56(0.145)  
3.9(0.154)  
3.7(0.146)  
2.84(0.112)  
2.54(0.100)  
2.7(0.106)  
2.6(0.102)  
MECHANICAL DATA  
0.6(.023)  
0.5(.020)  
.71(0.028)  
.50(0.020)  
.15(.006)  
MAX  
1.35(.053)  
.94(.037)  
.135(.005)  
.127(.004)  
1.15(.045)  
1.05(.041)  
Case: Molded plastic body  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Polarity: Polarity symbols marked on case  
Marking: B5817W:SJ, B5818W:SK, B5819W:SL  
.25(.010)  
MIN  
Dimensions in millimeters and (inches)  
A=25C  
Maximum ratings and electrical characteristics, Single diode @T  
SYMBOLS  
UNITS  
PARAMETER  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC Blocking voltage  
B5817W  
B5818W  
B5819W  
VRRM  
VRWM  
VR  
V
20  
14  
30  
40  
28  
RMS Reverse voltage  
VR(RMS)  
IO  
V
A
21  
Average rectified output current  
Peak forward surge current @=8.3ms  
Repetitive peak forward current  
Power dissipation  
Thermal resistance junction to ambient  
Storage temperature  
1
9
1.5  
A
IFSM  
IFRM  
A
250  
mW  
K/W  
C
Pd  
RΘJA  
500  
TSTG  
-65 to +150  
30  
Non-Repetitive peak reverse voltage  
Electrical ratings @TA=25C  
VRM  
20  
40  
V
SYMBOLS  
Min.  
20  
Max.  
Unit  
V
Test conditions  
PARAMETER  
Reverse breakdown voltage  
B5817W  
IR=1mA  
V
B5818W  
B5819W  
V(BR)  
30  
V
40  
VR=20V  
VR=30V  
VR=40V  
B5817W  
B5818W  
B5819W  
Reverse voltage leakage current  
Forward voltage  
1
IR  
mA  
0.45  
0.75  
0.55  
0.875  
0.6  
B5817W  
B5818W  
B5819W  
V
V
IF=1A  
IF=3A  
VF  
V
0.9  
120  
CD  
VR=4V,f=1.0MHz  
pF  
Diode capacitance  
MDD ELECTRONIC  

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