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B5818WS PDF预览

B5818WS

更新时间: 2024-01-21 19:58:49
品牌 Logo 应用领域
辰达行 - MDD 肖特基二极管
页数 文件大小 规格书
3页 158K
描述
SCHOTTKY BARRIER DIODE

B5818WS 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.66
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

B5818WS 数据手册

 浏览型号B5818WS的Datasheet PDF文件第2页浏览型号B5818WS的Datasheet PDF文件第3页 
B5817WS-B5819WS  
SCHOTTKY BARRIER DIODE  
SOD-323  
FEATURES  
1.35(0.053)  
1.15(0.045)  
1.26(.050)  
1.24(.048)  
For use in low voltage, high frequency inverters  
Free wheeling, and polanty protection applications  
2.75(0.108)  
2.30(0.091)  
2.75(0.108)  
1.80(0.071)  
1.60(0.063)  
1.80(0.071)  
1.60(0.063)  
2.30(0.091)  
MECHANICAL DATA  
.305(0.012)  
.295(0.010)  
0.4(0.016)  
.25(0.010)  
Case: Molded plastic body  
.177(.007)  
.089(.003)  
0.1(0.004)  
MIN  
1.00(.040)  
0.80(.031)  
Terminals: Plated leads solderable per MIL-STD-750,  
.72(0.028)  
.69(0.027)  
Method 2026  
Polarity: Polarity symbols marked on case  
.08(.003)  
MIN  
Marking: B5817W:SJ, B5818W:SK, B5819W:SL  
Dimensions in millimeters and (inches)  
Maximum ratings and electrical characteristics, Single diode @T  
A=25C  
SYMBOLS  
UNITS  
PARAMETER  
Peak repetitive peak reverse voltage  
Working peak  
DC Blocking voltage  
RMS Reverse voltage  
Average rectified output current  
Peak forward surge current @=8.3ms  
Repetitive peak forward current  
Power dissipation  
Thermal resistance junction to ambient  
Storage temperature  
B5817WS  
B5818WS  
B5819WS  
VRRM  
VRWM  
VR  
V
20  
14  
30  
40  
28  
VR(RMS)  
IO  
V
A
21  
1
9
625  
A
IFSM  
IFRM  
mA  
mW  
K/W  
200  
Pd  
RΘJA  
625  
TSTG  
-65 to +150  
30  
C
V
Non-Repetitive peak reverse voltage  
VRM  
20  
40  
Electrical ratings @TA=25C  
SYMBOLS  
Min.  
20  
Max.  
Unit  
V
Test conditions  
PARAMETER  
Reverse breakdown voltage  
B5817WS  
IR=1mA  
V
B5818WS  
B5819WS  
V(BR)  
30  
V
40  
VR=20V  
VR=30V  
VR=40V  
B5817WS  
B5818WS  
B5819WS  
Reverse voltage leakage current  
Forward voltage  
1
IR  
mA  
0.45  
0.75  
0.55  
0.875  
0.6  
B5817WS  
B5818WS  
B5819WS  
V
V
IF=1A  
IF=3A  
VF  
V
0.9  
120  
CD  
VR=4V,f=1.0MHz  
pF  
Diode capacitance  
MDD ELECTRONIC  

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