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8A4 PDF预览

8A4

更新时间: 2022-06-05 01:54:53
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
2页 76K
描述
GENERAL PURPOSE SILICON RECTIFIER

8A4 数据手册

 浏览型号8A4的Datasheet PDF文件第2页 
8A05 THRU 8A10  
GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
8.0 Amperes  
R-6  
FEATURES  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
1.0 (25.4)  
MIN.  
molded plastic technique  
0.360 (9.1)  
0.340(8.6)  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
DIA.  
0.360(9.1)  
0.340(8.6)  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
1.0 (25.4)  
MIN.  
MECHANICAL DATA  
0.052 (1.3)  
0.048 (1.2)  
Case: R-6 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.072 ounce, 2.05 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
UNITS  
800 1000 VOLTS  
560 700  
VOLTS  
8A05 8A1  
8A2  
8A4  
8A6  
8A8  
8A10  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600  
420  
600  
VRRM  
VRMS  
VDC  
100  
800 1000 VOLTS  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=60 C  
Peak forward surge current  
I(AV)  
8.0  
Amps  
IFSM  
600  
1.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
Maximum instantaneous forward voltage at 8.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10.0  
100  
µ
A
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
150  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
10.0  
TJ,TSTG  
-50 to +150  
Note:  
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  

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