Datasheet > 1S50

1S50

更新时间： 2024-02-23 10:24:00

品牌	Logo	应用领域
辰达行 - MDD		二极管
页数	文件大小	规格书
2页	73K
描述
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere

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技术参数
数据手册

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1S50 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.9	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1S50 数据手册

1S20 THRU 1SA0

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -

1.0 Ampere

FEATURES

R-1

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

0.102 (2.6)

0.091 (2.3)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.140(3.50)

0.114(2.90)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: R-1 molded plastic body

0.025 (0.60)

0.021 (0.50)

DIA.

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.007 ounce, 0.20 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

1S 1S

70 80

1S 1S 1S

20 30 40

1S 1S

50 60

SYMBOLS

MDD Catalog

UNITS

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

20 30 40 50 60 70 80

14 21 28 35 42 49 56

20 30 40 50 60 70 80

90 100

63 70

90 100

VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

1.0

Amp

IFSM

40.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

0.70

0.5

0.85

Maximum instantaneous forward voltage at 1.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

TA=100 C

10.0

Typical junction capacitance (NOTE 1)

110

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

50.0

-65 to +125

-65 to +150

TJ,

Storage temperature range

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

MDD ELECTRONIC

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1S50-F	RECTRON	Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon,	获取价格
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