1N5817SF THRU 1N5819SF
星合 子
XINGHE ELECTRONICS
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage 20 to 40 Volts
Forward Current - 1.0Ampere
FEATURES
SOD-123FL
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
0.040(1.00 )
0.020(0.50)
0.077(1.95 )
0.054(1.38)
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
0.114(2.90 )
0.098(2.50)
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds at terminals,
0.375"(9.5mm)lead length,5lbs.(2.3kg)tension
0.154(3.90)
0.138(3.50)
5°
0.010(0.25)
MAX
0.052(1.33)
0.031(0.8)
MECHANICAL DATA
0.010(0.25)
MIN
Case: SOD-123FL molded plastic body
Lead Finish: 100% Matte Sn (Tin)
Polarity: color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight: 11.7 mg(approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
1N5817SF
Symbols
1N5818SF
1N5819SF
Units
20
14
30
21
30
36
40
28
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
Volts
Volts
Volts
Maximum DC blocking voltage
20
24
40
48
Maximum non-repetitive peak reverse voltage
VRSM
Volts
Amp
Maximum average forward rectified current
1.0
I(AV)
IFSM
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
25.0
Amps
(JEDEC method) at TL=70 C
0.450
0.750
Maximum instantaneous forward voltage at 1.0 A(note 1 )
Maximum instantaneous forward voltage at 3.1 A(note 1 )
Maximum instantaneous reverse
0.550
0.875
0.600
0.900
VF
VF
Volts
Volts
0.2
10.0
T A=25 C
current at rated DC blocking
voltage(Note 1)
IR
mA
PF
TA=100 C
110.0
Typical junction capacitance(Note 3)
CJ
R
R
JA
JL
82.0
26.0
Typical thermal resistance(Note 2)
C/W
C
Operating junction and storage temperature range
-65 to +150
TJTSTG
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted with 1 in. copper pad (Cu area 700 mm2).
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
1
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