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1N4933G PDF预览

1N4933G

更新时间: 2024-02-05 17:06:58
品牌 Logo 应用领域
辰达行 - MDD 二极管
页数 文件大小 规格书
2页 74K
描述
Reverse Voltage - 50 to 600 Vol ts Forward Current -1.0 Ampere

1N4933G 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.6Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:0.2 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N4933G 数据手册

 浏览型号1N4933G的Datasheet PDF文件第2页 
1N4933G THRU 1N4937G  
FAST RECOVERY GLASS PASSIVATED RECTIFIERS  
Reverse Voltage - 50 to 600 Volts Forward Current -  
1.0 Ampere  
FEATURES  
DO-41  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Fast switching for high efficiency  
1.0 (25.4)  
MIN.  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
0.107(2.7)  
0.080(2.0)  
DIA.  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.205(5.2)  
0.166(4.2)  
MECHANICAL DATA  
Case: DO-41 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
1.0 (25.4)  
MIN.  
0.034(0.86)  
0.028(0.70)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.012 ounce, 0.33 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
4933G  
1N  
4934G  
1N  
4935G  
1N  
4936G  
1N  
4937G  
SYMBOLS  
UNITS  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
VOLTS  
VOLTS  
VOLTS  
VRRM  
VRMS  
VDC  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I(AV)  
1.0  
Amp  
IFSM  
VF  
30.0  
1.2  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
TA=100 C  
(NOTE 1)  
5.0  
50.0  
µ
A
IR  
trr  
ns  
200  
Typical junction capacitance (NOTE 2)  
CJ  
RθJA  
pF  
C/W  
C
15.0  
50.0  
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  

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