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1N4007G PDF预览

1N4007G

更新时间: 2024-02-06 17:21:40
品牌 Logo 应用领域
辰达行 - MDD 二极管PC
页数 文件大小 规格书
2页 123K
描述
1N4001G THRU 1N4007G

1N4007G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.58
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N4007G 数据手册

 浏览型号1N4007G的Datasheet PDF文件第2页 
1N4001G THRU 1N4007G  
GLASS PASSIVATED SILICON RECTIFIER  
1.0 Ampere  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
FEATURES  
DO-41  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
molded plastic technique  
1.0 (25.4)  
MIN.  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.205 (5.2)  
0.160(4.1)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-41 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
0.034 (0.86)  
0.028 (0.70)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.012 ounce, 0.33 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
SYMBOLS  
MDD Catalog  
UNITS  
800 1000 VOLTS  
560 700  
VOLTS  
Number  
4006G 4007G  
4001G 4002G 4003G 4004G 4005G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600  
420  
600  
VRRM  
VRMS  
VDC  
100  
800 1000 VOLTS  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I(AV)  
1.0  
Amp  
IFSM  
30.0  
1.1  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
50.0  
µ
A
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
15.0  
50.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
TJ,TSTG  
-50 to +150  
Note:  
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
(9.5mm)lead length,P.C.B. mounted  
2.Thermal resistance from junction to ambient at 0.375  
MDD ELECTRONIC  

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