Datasheet > CHEMH11GP

CHEMH11GP

更新时间： 2024-11-10 20:11:19

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
3页	183K
描述
Transistor,

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技术参数
数据手册

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CHEMH11GP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CHEMH11GP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHEMH11GP

SURFACE MOUNT

Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 50 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SOT-563)

* High current gain.

SOT-563

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Two CHDTC114E chips in one package.

* Built in bias resistor(R1=10kΩ, Typ. )

(1)

(5)

(4)

0.50

1.5~1.7

0.50

0.9~1.1

(3)

0.15~0.3

MARKING

1.1~1.3

* H11

0.5~0.6

0.09~0.18

1.5~1.7

CIRCUIT

R1 R2

SOT-563

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

Supply voltage

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-10

−

+40

DC Output current

−

IC(Max.)

PTOT

TSTG

100

150

+150

150

625

Tamb ≤ 25 ^OC, Note 1

−

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

^OC

−55

−

^OC

RθJ-A

−

junction - ambient air

^OC/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-07

12 3

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