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CHEMG6PTGP PDF预览

CHEMG6PTGP

更新时间: 2024-11-10 13:06:47
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 113K
描述
Transistor,

CHEMG6PTGP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

CHEMG6PTGP 数据手册

 浏览型号CHEMG6PTGP的Datasheet PDF文件第2页浏览型号CHEMG6PTGP的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHEMG6PT  
SURFACE MOUNT  
Dual Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SOT-553)  
* High current gain.  
SOT553  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Both the CHDTC144T in one package.  
* Built in bias resistor(R1=47kΩ, Typ. )  
(4)  
(5)  
(3)  
(1)  
0.50  
0.9~1.1  
1.5~1.7  
0.50  
0.15~0.3  
MARKING  
1.1~1.3  
* G6  
0.5~0.6  
0.19~0.18  
1.5~1.7  
3
2
1
5
CIRCUIT  
R1  
R1  
SOT553  
Dimensions in millimeters  
4
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
VALUE  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
VCBO  
Collector-Base voltage  
50  
50  
5
V
V
VCEO  
VEBO  
Collector-Emitter voltage  
Emitter-Base voltage  
V
IC(Max.)  
PD  
Collector current  
100  
150  
mA  
mW  
OC  
OC  
Tamb 25 OC, Note 1  
Power dissipation  
Storage temperature  
Junction temperature  
-55 ~ +150  
-55 ~ +150  
TSTG  
TJ  
OC/W  
RθJ-S  
, Note 1  
Thermal resistance  
junction - soldering point 140  
2004-07  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  

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