CHEMG11PT

更新时间： 2024-09-19 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	125K
描述
Dual Digital Silicon Transistor

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中文翻译

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技术参数
数据手册

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CHEMG11PT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

CHEMG11PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHEMG11PT

SURFACE MOUNT

Dual Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SOT-553)

* High current gain.

SOT553

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated two CHDTC123J transistors in one package.

* Built in bias resistor(R1=2.2kΩ, Typ. )

(4)

(5)

(3)

(1)

0.50

0.9~1.1

1.5~1.7

0.50

0.15~0.3

MARKING

1.1~1.3

*GA

0.5~0.6

0.19~0.18

1.5~1.7

CIRCUIT

SOT553

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

Supply voltage

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-5

−

+12

100

200

+150

150

833

DC Output current

−

IC(Max.)

PTOT

TSTG

Tamb ≤ 25 ^OC, Note 1

−

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

^OC

−55

−

^OC

junction - ambient air

^OC/W

RθJ-A

−

2004-07

Note

1. Transistor mounted on an FR4 printed-circuit board.

12 3

中文翻译

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