Datasheet > CHE1270A

CHE1270A

更新时间： 2024-09-18 03:25:27

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
6页	222K
描述
12-40GHz Wide Band Detector

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中文翻译

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数据手册

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CHE1270A 数据手册

CHE1270a

RoHS COMPLIANT

12-40GHz Wide Band Detector

GaAs Monolithic Microwave IC

Description

The CHE1270a is a detector that integrates a

matched detection diode (Vdet). A reference

diode is also available to be used in

differential mode (Vref).

RF IN

Matching

It is designed for a wide range of applications

where an accurate transmitted power control

is required, typically commercial

communication systems.

The circuit is manufactured with a Schottky

diode MMIC process, 1µm gate length, via

holes through the substrate and air bridges.

Vdet

Vref

It is available in chip form.

Transmitted power detection (mV)

10000

Main Features

12 GHz

32GHz

17GHz

37GHz

22GHz

40GHz

27GHz

1000

■

Wide frequency range 12-40GHz

30dB dynamic range

■ ESD protected

100

■ Chip size: 1.41 x 0.89 x 0.1mm

■ BCB layer protection

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2

10 12 14 16 18

Input power (dBm)

Main Characteristics

Tamb = +25°C, Vdc = +4.5V

Symbol

Parameter

Min

Typ

Max

Unit

Frequency range

Dynamic range

Return Loss

GHz

-10

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref. : DSCHE1270a8205 - 25 Jun 08

1/6

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6

中文翻译

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