Datasheet > CHE1260-QAG

CHE1260-QAG

更新时间： 2024-11-07 03:25:27

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
10页	785K
描述
12-27GHz Bidirectionnal Detector

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中文翻译

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数据手册

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CHE1260-QAG 数据手册

CHE1260-QAG

RoHS COMPLIANT

12-27GHz Bidirectionnal Detector

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHE1260-QAG is a bidirectionnal

detector that integrates passive

bidirectionnal coupler, two matched detector

diodes and two reference diodes.

Vref_R

Vdet_R

It allows the measurement of transmitted and

reflected power. It is designed for a wide

range of applications where an accurate

transmitted power control is required,

DC_R

typically

systems.

commercial

communication

RF_in

RF_out

The circuit is manufactured with a Schottky

diode MMIC process, 1µm gate length, via

holes through the substrate and air bridges.

Vdet_I

Vref_I

It is supplied in leadless SMD package.

DC_I

Incident power detection (mV)

10000

1000

100

Main Features

■

Wide frequency range 12-27GHz

■ Bidirectionnal detection

■ 30dB dynamic range

■ ESD protected

12GHz

22GHz

17GHz

27GHz

■ 16L-QFN3x3 SMD package

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2

10 12 14 16 18 20

Main Characteristics

Incident power (dBm)

Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)

Symbol

Parameter

Min

Typ

Max

Unit

Frequency range

Insertion Loss

GHz

Dynamic Range

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref : DSCHE1260-QAG8057 - 22 Feb 08

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

12 3 4 5 6 7...10

中文翻译

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与CHE1260-QAG相关器件

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