Datasheet > CHE1260

CHE1260

更新时间： 2024-09-18 03:25:27

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
8页	704K
描述
10-27GHz Bidirectionnal Detector

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CHE1260 数据手册

CHE1260

RoHS COMPLIANT

10-27GHz Bidirectionnal Detector

GaAs Monolithic Microwave IC

Description

The CHE1260 is a bidirectionnal detector

that integrates a passive bidirectionnal

coupler, two matched detection diodes and

two reference diodes.

Vref_R

Vdet_R

DC_R

It allows the measurement of transmitted and

reflected power. It is designed for a wide

range of applications where an accurate

transmitted power control is required,

RF_in

RF_out

typically

commercial

communication

systems.

Vdet_I

Vref_I

DC_I

The circuit is manufactured with a Schottky

diode MMIC process, 1µm gate length, via

holes through the substrate and air bridges.

It is available in chip form.

Incident power detection (mV)

10000

1000

100

10GHz

22GHz

12GHz

27GHz

17GHz

Main Features

■

Wide frequency range 10-27GHz

■ Bidirectionnal detection

■ 30dB dynamic range

■ ESD protected

■ Chip size: 1.41 x 1.41 x 0.1 mm

■ BCB layer protection (see page 8)

-15 -13 -11 -9 -7 -5 -3 -1

9 11 13 15 17 19 21 23 25 27 29

Incident power (dBm)

Main Characteristics

Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)

Symbol

Parameter

Min

Typ

Max

Unit

Frequency range

Insertion Loss

GHz

0.8

Dynamic Range

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref : DSCHE1260-8058 - 28 Feb 08

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

12 3 4 5 6 7 8

中文翻译

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