CHDTD114EKGP

更新时间： 2024-02-23 19:03:29

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	102K
描述
Transistor,

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技术参数
数据手册

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CHDTD114EKGP 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

CHDTD114EKGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTD114EKPT

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SC-59/SOT-346)

* High current gain.

SC-59/SOT-346

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated NPN transistors in one package.

* Built in bias resistor(R1=10kΩ, Typ. )

(2)

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

CONSTRUCTION

0.3~0.51

* One NPN transistors and bias of thin-film resistors in one

package.

1.2~1.9

MARKING

0.89~1.3

EKJ

0.085~0.2

0~0.1

0.3~0.6

Gnd

CIRCUIT

2.1~2.95

Dimensions in millimeters

SC-59/SOT-346

Out

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-10

+40

DC Output current

−

500

Tamb ≤ 25 ^OC, Note 1

−

P_TOT

T_STG

Total power dissipation

Storage temperature

200

^OC

−55

+150

T_J

−

Junction temperature

Thermal resistance

150

^OC

RθJ-S

junction - soldering point

^OC/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-01

12 3

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