CHDTD113ZUPT

更新时间： 2024-09-18 06:47:43

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	166K
描述
NPN Digital Silicon Transistor

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CHDTD113ZUPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTD113ZUPT

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SC-70/SOT-323)

* High current gain.

SC-70/SOT-323

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated NPN transistors in one package.

* Built in bias resistor(R1=1.0kΩ, Typ. )

0.65

1.3±0.1

2.0±0.2

0.65

0.3±0.1

CONSTRUCTION

1.25±0.1

* One NPN transistors and bias of thin-film resistors in one

package.

MARKING

0.8~1.1

ZUB

0.05~0.2

0~0.1

0.1Min.

Gnd

2.0~2.45

CIRCUIT

SC-70/SOT-323

Dimensions in millimeters

Out

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-5

−

+10

500

DC Output current

Tamb ≤ 25 ^OC, Note 1

−

P_TOT

T_STG

Total power dissipation

Storage temperature

200

^OC

−55

−

+150

Junction temperature

Thermal resistance

150

^OC

T_J

junction - soldering point

^OC/W

RθJ-S

−

Note

1. Transistor mounted on an FR4 printed-circuit board.

2005-06

12 3

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