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CHDTC623TUPT PDF预览

CHDTC623TUPT

更新时间: 2024-09-18 06:47:43
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 82K
描述
NPN Digital Silicon Transistor

CHDTC623TUPT 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

CHDTC623TUPT 数据手册

 浏览型号CHDTC623TUPT的Datasheet PDF文件第2页浏览型号CHDTC623TUPT的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHDTC623TUPT  
SURFACE MOUNT  
NPN Digital Silicon Transistor  
VOLTAGE 20 Volts CURRENT 600 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SC-70/SOT-323)  
SC-70/SOT-323  
* In addition to the features of regular digital transistor.  
VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors  
ideal for muting circuits.  
* These transistors can be used at high current levels,IC=600mA  
* Internal isolated NPN transistors in one package.  
* Built in single resistor(R1=2.2kΩ, Typ. )  
0.65  
1.3±0.1  
2.0±0.2  
0.65  
0.3±0.1  
CONSTRUCTION  
1.25±0.1  
* One NPN transistors and bias of thin-film resistors in one  
package.  
MARKING  
0.8~1.1  
0.05~0.2  
0~0.1  
0.1Min.  
Emitter  
2
Base  
1
2.0~2.45  
CIRCUIT  
TR  
R1  
3
Collector  
SC-70/SOT-323  
Dimensions in millimeters  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
VALUE  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
VCBO  
Collector-Base voltage  
20  
V
V
V
20  
VCEO  
VEBO  
Collector-Emitter voltage  
Emitter-Base voltage  
12  
IC(Max.)  
Collector current  
600  
mA  
Tamb 25 OC, Note 1  
200  
PD  
Power dissipation  
mW  
OC  
OC  
-55 ~ +150  
TSTG  
Storage temperature  
-55 ~ +150  
TJ  
Junction temperature  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2005-09  

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