CHDTC314TUPTGP

更新时间： 2024-09-18 13:06:47

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力勤 - CHENMKO		晶体晶体管
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3页	88K
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CHDTC314TUPTGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTC314TKPT

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 30 Volts CURRENT 600 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SOT-23)

* High current gain.

SOT-23

* Suitable for high packing density.

* Low colloector-emitter saturation(VCE(sat)=40mV

at IC/IB=50mA/2.5mA).

(1)

(2)

* High Collector current (IC(Max.)=600mA).

* Internal isolated NPN transistors in one package.

* Built in single resistor(R1=10kΩ, Typ. )

(3)

CONSTRUCTION

* One NPN transistors and bias of thin-film resistors in one

package.

(

)

(

)

.055 1.40

.028 0.70

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

Emitter

Base

(

)

.045 1.15

CIRCUIT

(

)

.033 0.85

SOT-23

Collector

Dimensions in inches and (millimeters)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

VALUE

SYMBOL

PARAMETER

CONDITIONS

UNIT

VCBO

Collector-Base voltage

VCEO

VEBO

Collector-Emitter voltage

Emitter-Base voltage

IC(Max.)

Collector current

600

200

^OC

Tamb ≤ 25 ^OC, Note 1

Power dissipation

Storage temperature

Junction temperature

-55 ~ +150

+150

TSTG

^OC

^OC/W

RθJ-S

, Note 1

Thermal resistance

junction - soldering point 140

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-01

12 3

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