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CHDTC125TKPTGP PDF预览

CHDTC125TKPTGP

更新时间: 2024-09-17 13:06:47
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
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2页 60K
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CHDTC125TKPTGP 数据手册

 浏览型号CHDTC125TKPTGP的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
CHDTC125TKPT  
SURFACE MOUNT  
NPN Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SOT-23)  
* High current gain.  
SOT-23  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Internal isolated NPN transistors in one package.  
* Built in single resistor(R1=200kΩ, Typ. )  
(1)  
(2)  
(3)  
CONSTRUCTION  
* One NPN transistors and bias of thin-film resistors in one  
package.  
(
)
(
)
.055 1.40  
.028 0.70  
(
)
(
)
.047 1.20  
.020 0.50  
(
)
.103 2.64  
.086 (2.20)  
Emitter  
2
Base  
1
(
)
.045 1.15  
CIRCUIT  
(
)
.033 0.85  
TR  
R1  
3
Collector  
SOT-23  
Dimensions in inches and (millimeters)  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
VALUE  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
VCBO  
Collector-Base voltage  
50  
50  
5
V
V
V
VCEO  
VEBO  
Collector-Emitter voltage  
Emitter-Base voltage  
IC(Max.)  
PD  
Collector current  
100  
200  
mA  
mW  
OC  
Tamb 25 OC, Note 1  
Power dissipation  
Storage temperature  
Junction temperature  
-55 ~ +150  
-55 ~ +150  
TSTG  
TJ  
OC  
OC/W  
RθJ-S  
, Note 1  
Thermal resistance  
junction - soldering point 140  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2003-06  

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