Datasheet > CHDTC123EKGP

CHDTC123EKGP

更新时间： 2024-02-13 18:24:25

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
3页	207K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CHDTC123EKGP 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

CHDTC123EKGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTC123EKGP

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SOT-23)

* High current gain.

SOT-23

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated NPN transistors in one package.

* Built in bias resistor(R1=2.2kΩ, Typ. )

(1)

(2)

(3)

CONSTRUCTION

* One NPN transistors and bias of thin-film resistors in one

package.

(

)

(

)

.055 1.40

.028 0.70

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

Gnd

(

)

.045 1.15

CIRCUIT

(

)

.033 0.85

SOT-23

Dimensions in millimeters

Out

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-10

−

+12

100

DC Output current

−

IC(Max.)

PTOT

TSTG

100

Tamb ≤ 25 ^OC, Note 1

−

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

200

^OC

−55

−

+150

150

^OC

RθJ-S

−

junction - soldering point

^OC/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2003-12

12 3

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