CHDTC115EKPT

更新时间： 2024-02-25 11:39:31

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	71K
描述
NPN Digital Silicon Transistor

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技术参数
数据手册

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CHDTC115EKPT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

CHDTC115EKPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTC115EKPT

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 20 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SC-59/SOT-346)

* High current gain.

SC-59/SOT-346

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated NPN transistors in one package.

* Built in bias resistor(R1=100kΩ, Typ. )

(2)

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

CONSTRUCTION

0.3~0.51

* One NPN transistors and bias of thin-film resistors in one

package.

1.2~1.9

MARKING

EKF

0.89~1.3

0.085~0.2

0~0.1

0.3~0.6

Gnd

CIRCUIT

2.1~2.95

Out

Dimensions in millimeters

SC-59/SOT-346

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

UNIT

VCC

−

VIN

Input voltage

-10

−

+40

DC Output current

−

IC(Max.)

PTOT

TSTG

100

200

+150

150

Tamb ≤ 25 ^OC, Note 1

−

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

^OC

−55

−

^OC

RθJ-S

−

junction - soldering point

^OC/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2003-12

12 3

中文翻译

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