CHDTC114TEPT

更新时间： 2024-09-24 06:47:39

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	76K
描述
NPN Digital Silicon Transistor

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CHDTC114TEPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTC114TEPT

SURFACE MOUNT

NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

SC-75/SOT-416

* Small surface mounting type. (SC-75/SOT-416)

* High current gain.

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated NPN transistors in one package.

* Built in single resistor(R1=10kΩ, Typ. )

0.1

0.2±

0.05

0.5

1.6±0.2

1.0±0.1

0.3±

0.1

0.05

0.1

0.2±

0.05

CONSTRUCTION

0.8±0.1

* One NPN transistors and bias of thin-film resistors in one

package.

MARKING

TEB

0.6~0.9

0~0.1

0.15±0.05

0.1Min.

Emitter

Base

1.6±0.2

CIRCUIT

SC-75/SOT-416

Dimensions in millimeters

Collector

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

VALUE

SYMBOL

PARAMETER

CONDITIONS

UNIT

VCBO

Collector-Base voltage

VCEO

VEBO

Collector-Emitter voltage

Emitter-Base voltage

IC(Max.)

Collector current

100

150

^OC

Tamb ≤ 25 ^OC, Note 1

Power dissipation

Storage temperature

Junction temperature

-55 ~ +150

TSTG

^OC

^OC/W

RθJ-S

, Note 1

Thermal resistance

junction - soldering point 140

Note

1. Transistor mounted on an FR4 printed-circuit board.

2003-06

12 3

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