CHDTB123TKPT

更新时间： 2024-02-02 08:19:14

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
PNP Digital Silicon Transistor

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中文翻译

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技术参数
数据手册

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CHDTB123TKPT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

CHDTB123TKPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTB123TKPT

SURFACE MOUNT

PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

SC-59/SOT-346

* Small surface mounting type. (SC-59/SOT-346)

* High current gain.

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated PNP transistors in one package.

* Built in bias resistor(R1=2.2kΩ, Typ. )

(2)

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

CONSTRUCTION

0.3~0.51

* One PNP transistors and bias of thin-film resistors in one

package.

1.2~1.9

MARKING

0.89~1.3

TK8

0.085~0.2

0~0.1

0.3~0.6

CIRCUIT

2.1~2.95

Dimensions in millimeters

SC-59/SOT-346

LIMITING VALUES

In accordance with the Absolute Maximum Rating System .

VALUE

SYMBOL

PARAMETER

CONDITIONS

UNIT

VCBO

Collector-Base voltage

-50

-40

VCEO

VEBO

Collector-Emitter voltage

Emitter-Base voltage

-5

Collector current

-500

Tamb ≤ 25 ^OC, Note 1

Collector Power dissipation

Storage temperature

Junction temperature

200

^OC

-55 ~ +150

TSTG

^OC

^OC/W

RθJ-S

, Note 1

Thermal resistance

junction - soldering point 140

Note

1. Transistor mounted on an FR4 printed-circuit board.

2003-12

12 3

中文翻译

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