CHDTB113EKGP

更新时间： 2024-02-25 17:05:41

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	167K
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CHDTB113EKGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTB113EKPT

SURFACE MOUNT

PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

SC-59/SOT-346

* Small surface mounting type. (SC-59/SOT-346)

* High current gain.

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated PNP transistors in one package.

* Built in bias resistor(R1=1.0kΩ, Typ. )

(2)

(3)

0.95

2.7~3.1

0.95

(1)

1.7~2.1

CONSTRUCTION

0.3~0.51

* One PNP transistors and bias of thin-film resistors in one

package.

1.2~1.9

MARKING

0.89~1.3

EK7

0.085~0.2

0~0.1

0.3~0.6

Gnd

CIRCUIT

2.1~2.95

Dimensions in millimeters

SC-59/SOT-346

Out

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

-50

UNIT

VCC

−

VIN

Input voltage

-10

+10

DC Output current

−

-500

Tamb ≤ 25 ^OC, Note 1

−

PTOT

TSTG

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

200

+150

150

140

^OC

−55

−

^OC

junction - soldering point

^OC/W

RθJ-S

−

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004-01

12 3

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