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CHDTA143EMPT PDF预览

CHDTA143EMPT

更新时间: 2024-09-24 06:47:39
品牌 Logo 应用领域
力勤 - CHENMKO 晶体晶体管
页数 文件大小 规格书
3页 120K
描述
PNP Digital Silicon Transistor

CHDTA143EMPT 数据手册

 浏览型号CHDTA143EMPT的Datasheet PDF文件第2页浏览型号CHDTA143EMPT的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
CHDTA143EMPT  
SURFACE MOUNT  
PNP Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
SOT-723  
* Small surface mounting type. (SOT723)  
* High current gain.  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Internal isolated PNP transistors in one package.  
* Built in bias resistor(R1=4.7kΩ, Typ. )  
0.17~0.27  
(2)  
(3)  
0.4  
0.4  
1.15~1.25  
0.75~0.85  
0.27~0.37  
(10) .17~0.27  
0.75~0.85  
CONSTRUCTION  
* One PNP transistors and bias of thin-film resistors in one  
package.  
0.45~0.55  
0.11~0.14  
Gnd  
2
In  
1
1.15~1.25  
CIRCUIT  
R2  
R1  
TR  
3
Out  
SOT-723  
Dimensions in millimeters  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
Supply voltage  
MIN.  
MAX.  
UNIT  
VCC  
-50  
V
VIN  
Input voltage  
-30  
+10  
-100  
-100  
150  
V
IO  
DC Output current  
mA  
IC(Max.)  
PTOT  
TSTG  
TJ  
Tamb 25 OC, Note 1  
Total power dissipation  
Storage temperature  
Junction temperature  
Thermal resistance  
mW  
OC  
55  
+150  
150  
OC  
RθJ-S  
junction - soldering point  
140  
OC/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004-06  

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