CHDTA114WUPT

更新时间： 2024-02-15 01:11:12

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
2页	67K
描述
PNP Digital Silicon Transistor

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中文翻译

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技术参数
数据手册

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CHDTA114WUPT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

CHDTA114WUPT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHDTA114WUPT

SURFACE MOUNT

PNP Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 100 mAmpere

APPLICATION

* Switching circuit, Inverter, Interface circuit, Driver circuit.

FEATURE

* Small surface mounting type. (SC-70/SOT323)

* High current gain.

SC-70/SOT-323

* Suitable for high packing density.

* Low colloector-emitter saturation.

* High saturation current capability.

* Internal isolated PNP transistors in one package.

* Built in bias resistor(R1=10kΩ, Typ. )

0.65

1.3±0.1

2.0±0.2

0.65

0.3±0.1

CONSTRUCTION

1.25±0.1

* One PNP transistors and bias of thin-film resistors in one

package.

0.8~1.1

0.05~0.2

0~0.1

0.1Min.

Gnd

2.0~2.45

CIRCUIT

SC-70/SOT-323

Out

Dimensions in millimeters

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Supply voltage

CONDITIONS

MIN.

MAX.

-50

UNIT

VCC

−

VIN

Input voltage

-30

−

+10

-100

200

DC Output current

−

IC(Max.)

PTOT

TSTG

Tamb ≤ 25 ^OC, Note 1

−

Total power dissipation

Storage temperature

Junction temperature

Thermal resistance

^OC

−55

−

+150

150

^OC

junction - soldering point

140

^OC/W

RθJ-S

−

Note

1. Transistor mounted on an FR4 printed-circuit board.

2005-06

中文翻译

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