Datasheet > CHBTA13PT

CHBTA13PT

更新时间： 2024-01-02 16:17:31

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	65K
描述
NPN Darlington Transistor

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CHBTA13PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

CHBTA13PT

SURFACE MOUNT

NPN Darlington Transistor

VOLTAGE 30 Volts CURRENT 1.2 Ampere

APPLICATION

* High current gain applications.

FEATURE

* Small surface mounting type. (SOT-23)

* High current (Max.=1200mA).

SOT-23

* Suitable for high packing density.

* Low voltage (Max.=30V) .

* High saturation current and current gain capability.

(1)

(2)

(3)

CONSTRUCTION

* NPN Darlington Transistor

(

)

(

)

.055 1.40

.028 0.70

MARKING

* NI

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

(

)

.045 1.15

(3)

(2)

CIRCUIT

(

)

.033 0.85

(1)

Dimensions in inches and (millimeters)

SOT-23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS

V_CBOcollector-base voltage open emitter

MIN.

MAX.

UNIT

−

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current DC

peak collector current

peak base current

open base

open collector

1200

1500

0.5

I_CM

I_BM

≤

P_tot

total power dissipation

derate above 25 ^OC

T_amb25 °C; note 1

−

350

2.8

mW/^OC

T_stg

T_j

storage temperature

−55

−

+150

°C

junction temperature

T_amb

operating ambient temperature

−55

Note

1. Transistor mounted on an FR4 printed-circuit board, 1.6"X1.6"X0.06".

2003-5

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