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CH751G-40 PDF预览

CH751G-40

更新时间: 2024-11-07 09:24:35
品牌 Logo 应用领域
江苏长电/长晶 - CJ 二极管
页数 文件大小 规格书
2页 68K
描述
Schottky barrier Diodes

CH751G-40 数据手册

 浏览型号CH751G-40的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOD-723 Plastic-Encapsulate Diodes  
SOD-723  
CH751G-40 Schottky barrier Diodes  
FEATURES  
l Small surface mounting type  
l Low reverse current and low forward voltage  
l High reliability  
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Symbol  
VRM  
VR  
Limits  
40  
Unit  
V
30  
V
Mean rectifying current  
Peak forward surge current  
Junction temperature  
Storage temperature  
IO  
30  
mA  
mA  
IFSM  
Tj  
200  
+125  
-40~+125  
Tstg  
Electrical Ratings @TA=25℃  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Forward voltage  
VF  
IR  
0.37  
0.5  
V
IF=1mA  
VR=30V  
μA  
pF  
Reverse current  
Capacitance between terminals  
CT  
2
VR=1V,f=1MHZ  

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