Datasheet > CGY2260UH

CGY2260UH

更新时间： 2024-11-19 14:55:47

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
6页	564K
描述
Low Noise Amplifier, Ka-Band

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数据手册

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CGY2260UH 数据手册

Low Noise Amplifier, Ka-Band

24 - 44 GHz

CGY2260UH/C1

Rev. V1

Features

•

Noise Figure: 1.7 dB

Gain: 25.5 dB

OIP3: 22 dBm

Output Power @ P1dB: 6 dBm

Single Positive & Negative Supply Auto Bias /

Temp Controlled:

- VD = 1.5 V

- VS = -1.5 V

- IQtot = 52 mA (78 mW)

50 Ω Input & Output Matched

Chip Size: 3.00 x 1.68 mm

100% RF Tested, Known Good Die

Uses a highly reliable pHEMT MMIC process

Samples Available

•

RoHS* Compliant

Applications

•

Radar

SATCOM

Telecommunications

Instrumentation

Description

The CGY2260UH/C1 is a high-performance GaAs

low noise amplifier MMIC designed to operate in the

Ka-Band.

Ordering Information

Part Number

The die is manufactured using an advanced 70 nm

gate length high Indium content mHEMT technology

(D007IH).

Package

CGY2260UH/C1

The MMIC uses gold bonding pads and backside

metallization and is fully protected with Silicon

Nitride passivation to obtain the highest level of

reliability.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0029653

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