Datasheet > CGY2221UH

CGY2221UH

更新时间： 2024-11-19 14:53:59

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
6页	386K
描述
Low Noise Amplifier, X-Band

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数据手册

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CGY2221UH 数据手册

Low Noise Amplifier, X-Band

8 - 12 GHz

CGY2221UH/C1

Rev. V1

Features

•

Suitable for X-Band Applications

Frequency Range: 8 - 12 GHz

Single Supply Architecture

Gain: 16 dB

Gain Flatness: ± 0.8 dB

Noise Figure: 1.6 dB

Input Return Loss: 12 dB

Output Return Loss: 15 dB

Maximum Input Power: 31 dBm

Output P1dB: 17 dBm

Output IP3: 29 dBm

Power Supply: 82 mA @ 5 V

Chip Size: 2 x 1 mm

RoHS* Compliant

Applications

•

Radar

Telecommunications

Instrumentations

Description

Pin Configuration¹

The CGY2221UH/C1 is a high performance GaAs

single supply low noise amplifier MMIC designed to

operate in the X-band with an extremely high

maximum input RF power.

RFIN

RFOUT

GND

Function

RF Input

RF Output

This device has an a low noise figure of 1.6 dB with

minimum 16 dB of Gain. The on chip matching

provides better than 12 dB of input and output return

loss.

Ground

VDD

Single Supply Voltage

1. The exposed pad centered on the package bottom must be

connected to RF, DC and thermal ground.

The die is manufactured using a 0.13 μm gate length

pHEMT technology. The MMIC uses gold bonding

pads and backside metallization and is fully

protected with Silicon Nitride passivation to obtain

the highest level of reliability.

Ordering Information

Part Number

Package

This technology has been evaluated for Space

applications and is on the European Preferred Parts

List of the European Space Agency.

CGY2221UH/C1

Die

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology SolutionsInc. (MACOM ) anditsaffiliatesreservetherightto makechangestotheproduct(s)orinformationcontained herein withoutnotice.

Forfurtherinformation andsupport pleasevisit: https://www.macom.com/support

DC-0029649

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