5秒后页面跳转
CGHV60170D-GP4 PDF预览

CGHV60170D-GP4

更新时间: 2024-11-11 15:19:43
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
8页 483K
描述
170 W; 6.0 GHz; 50 V GaN HEMT Die

CGHV60170D-GP4 数据手册

 浏览型号CGHV60170D-GP4的Datasheet PDF文件第2页浏览型号CGHV60170D-GP4的Datasheet PDF文件第3页浏览型号CGHV60170D-GP4的Datasheet PDF文件第4页浏览型号CGHV60170D-GP4的Datasheet PDF文件第5页浏览型号CGHV60170D-GP4的Datasheet PDF文件第6页浏览型号CGHV60170D-GP4的Datasheet PDF文件第7页 
CGHV60170D  
170 W, 6.0 GHz, 50V GaN HEMT Die  
Description  
The CGHV60170D is a gallium nitride (GaN) High Electron  
Mobility Transistor (HEMT). GaN has superior properties  
compared to silicon or gallium arsenide, including  
higher breakdown voltage, higher saturated electron  
drif velocity, and higher thermal conductivity. GaN  
HEMTs offer greater power density and wider bandwidths  
compared to Si and GaAs transistors.  
PN: CGHV60170D  
Features  
Applications  
18 dB Typical Small Signal Gain at 4 GHz  
17 dB Typical Small Signal Gain at 6 GHz  
65% Typical Power Added Efficiency  
170 W Typical PSAT  
50 V Operation  
High Breakdown Voltage  
Broadband ampliꢀiers  
Tactical communications  
Satellite communications  
Industrial, Scientiꢀic, and Medical ampliꢀiers  
Class A, AB, Linear ampliꢀiers suitable ꢀor OFDM,  
W-CDMA, LTE, EDGE, CDMA waveꢀorms  
Up to 6 GHz Operation  
Packaging Information  
Bare die are shipped in Gel-Pak® containers  
Non-adhesive tacky membrane immobilizes die during shipment  
Large Signal Models Available for ADS and MWO  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 1.2, 2022-12-12  
For further information and support please visit:  
https://www.macom.com/support  

与CGHV60170D-GP4相关器件

型号 品牌 获取价格 描述 数据表
CGHV96050F1 CREE

获取价格

50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F1 MACOM

获取价格

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT
CGHV96050F1-AMP CREE

获取价格

50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F1-TB CREE

获取价格

50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F2 CREE

获取价格

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
CGHV96050F2 MACOM

获取价格

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT
CGHV96100 MACOM

获取价格

100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2 CREE

获取价格

100 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96100F2-AMP CREE

获取价格

100 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96100F2-JMT CREE

获取价格

100 W, 7.9 - 9.6 GHz, 50-ohm, Input