Datasheet > CGHV60075D5

CGHV60075D5

更新时间： 2024-11-09 01:25:47

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
7页	662K
描述
19 dB Typical Small Signal Gain at 4 GHz

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CGHV60075D5 数据手册

CGHV60075D5

75 W, 6.0 GHz, GaN HEMT Die

Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN

has superior properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

•ꢀ 19ꢀdBꢀTypicalꢀSmallꢀSignalꢀGainꢀatꢀ4ꢀGHz

•ꢀ 2-WayꢀPrivateꢀRadio

•ꢀ 17ꢀdBꢀTypicalꢀSmallꢀSignalꢀGainꢀatꢀ6ꢀGHz

•ꢀ 65%ꢀTypicalꢀPowerꢀAddedꢀEfﬁciencyꢀatꢀ4ꢀGHz

•ꢀ 60%ꢀTypicalꢀPowerꢀAddedꢀEfﬁciencyꢀatꢀ6ꢀGHz

•ꢀ 75ꢀWꢀTypicalꢀP_SAT

•ꢀ BroabandꢀAmpliﬁers

•ꢀ Cellular Infrastructure

•ꢀ Test Instrumentation

•ꢀ ClassꢀA,ꢀAB,ꢀLinearꢀampliﬁersꢀsuitableꢀforꢀ

OFDM,ꢀW-CDMA,ꢀEDGE,ꢀCDMAꢀwaveforms

•ꢀ 50ꢀVꢀOperation

•ꢀ HighꢀBreakdownꢀVoltage

•ꢀ Upꢀtoꢀ6ꢀGHzꢀOperation

Packaging Information

•ꢀ BareꢀdieꢀareꢀshippedꢀonꢀtapeꢀorꢀinꢀGel-Pak®ꢀcontainers.

•ꢀ Non-adhesiveꢀtackyꢀmembraneꢀimmobilizesꢀdieꢀduringꢀshipment.

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
CGHV60075D5-GP4	MACOM	获取价格	75 W; 6.0 GHz; GaN HEMT Die
CGHV60170D	CREE	获取价格	170 W, 6.0 GHz, 50V GaN HEMT Die
CGHV60170D-GP4	MACOM	获取价格	170 W; 6.0 GHz; 50 V GaN HEMT Die
CGHV96050F1	CREE	获取价格	50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F1	MACOM	获取价格	50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT
CGHV96050F1-AMP	CREE	获取价格	50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F1-TB	CREE	获取价格	50 W, 7.9 - 9.6 GHz, 50-ohm, Input
CGHV96050F2	CREE	获取价格	50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
CGHV96050F2	MACOM	获取价格	50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT
CGHV96100	MACOM	获取价格	100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier