Datasheet > CGHV14800

CGHV14800

更新时间： 2024-03-03 10:08:44

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	624K
描述
800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

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CGHV14800 数据手册

CGHV14800

800 W, 960 - 1400 MHz, 50 V, GaN HEMT for

L-Band Radar Systems

Description

The CGHV14800 is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically with high efficiency, high gain and wide bandwidth

capabilities, which makes the CGHV14800 ideal for 960 - 1400 MHz pulsed L-Band

radar amplifier applications, such as air traffic control (ATC) radar, weather radar,

penetration radars, antimissile system radars, target tracking radars and long range

survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering

> 65% drain efficiency. The GaN HEMT comes in a ceramic/metal flange package.

Package Type: 440117

PN: CGHV14800F

Typical Performance Over 1.2 - 1.4 GHz (T_C= 25°C) of Demonstration Amplifier

Parameter

Output Power

Gain

1.2 GHz

1000

15.5

1.25 GHz

940

1.3 GHz

940

1.35 GHz

920

1.4 GHz

910

Units

15.2

15.1

Drain Efficiency

Note: Measured in the CGHV14800F-AMP amplifier circuit, under 100µsecs pulse width, 5% duty cycle, P_IN= 44.5 dBm.

Features

•

Reference design amplifier 1.2 - 1.4 GHz Operation

910 W Typical Output Power

14 dB Power Gain

•

70% Typical Drain Efficiency

<0.3 dB Pulsed Amplitude Droop

Internally input and output matched

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.5, 2022-12-2

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...10

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CGHV14800F	CREE	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems	获取价格
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