CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Description
The CGH60030D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT). GaN has superior properties
compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity,
and higher thermal conductivity. GaN HEMTs offer greater
power density and wider bandwidths compared to Si and
GaAs transistors.
PN: CGH60030D
Features
Applications
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15 dB Typical Small Signal Gain at 4 GHz
12 dB Typical Small Signal Gain at 6 GHz
30 W Typical PSAT
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2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
28 V Operation
High Breakdown Voltage
High Temperature Operation
Up to 6 GHz Operation
High Efficiency
Packaging Information
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Bare die are shipped in Gel-Pak® containers
Non-adhesive tacky membrane immobilizes die during shipment
Large Signal Models Available for ADS and MWO
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MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Rev. 4.2, 2022-12-1
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