Datasheet > CGH60030D

CGH60030D

更新时间： 2022-02-26 14:18:48

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

CGH60030D 数据手册

CGH60030D

30 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60030Disagalliumnitride(GaN)HighElectronMobility

Transistor (HEMT). GaN has superior properties compared to

silicon or gallium arsenide, including higher breakdown voltage,

higher saturated electron drift velocity, and higher thermal

conductivity. GaN HEMTs offer greater power density and wider

bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

•ꢀ 15 dB Typical Small Signal Gain at 4 GHz

•ꢀ 2-Way Private Radio

•ꢀ 12 dB Typical Small Signal Gain at 6 GHz

•ꢀ 30 W Typical P_SAT

•ꢀ BroadbandꢀAmpliﬁers

•ꢀ Cellular Infrastructure

•ꢀ Test Instrumentation

•ꢀ ClassꢀA,ꢀAB,ꢀLinearꢀampliﬁersꢀsuitableꢀ

for OFDM, W-CDMA, EDGE, CDMA

waveforms

•ꢀ 28 V Operation

•ꢀ High Breakdown Voltage

•ꢀ High Temperature Operation

•ꢀ Up to 6 GHz Operation

•ꢀ HighꢀEfﬁciency

Packaging Information

•ꢀ Bare die are shipped in Gel-Pak® containers.

•ꢀ Non-adhesive tacky membrane immobilizes die during

shipment.

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7 8

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
CGH60030D-GP4	MACOM	获取价格	30 W; 6.0 GHz; GaN HEMT Die
CGH60060D	CREE	获取价格	60 W, 6.0 GHz, GaN HEMT Die
CGH60060D-GP4	MACOM	获取价格	60 W; 6.0 GHz; GaN HEMT Die
CGH60120D	CREE	获取价格	120 W, 6.0 GHz, GaN HEMT Die
CGH60120D-GP4	MACOM	获取价格	120 W; 6.0 GHz; GaN HEMT Die
CGH602T350X4L	CDE	获取价格	Inverter Grade Screw Terminal Aluminum Electr
CGH602T350X4L0NF	CDE	获取价格	CAP,AL2O3,6MF,350VDC,10% -TOL,50% +TOL
CGH602T350X4L0NH	CDE	获取价格	CAP,AL2O3,6MF,350VDC,10% -TOL,50% +TOL
CGH602T350X4L0NL	CDE	获取价格	CAP,AL2O3,6MF,350VDC,10% -TOL,50% +TOL
CGH602T350X4L0NN	CDE	获取价格	CAP,AL2O3,6MF,350VDC,10% -TOL,50% +TOL