Datasheet > CGH60008D-GP4

CGH60008D-GP4

更新时间： 2024-11-14 17:01:51

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	504K
描述
8 W; 6.0 GHz; GaN HEMT Die

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CGH60008D-GP4 数据手册

CGH60008D

8 W, 6.0 GHz, GaN HEMT Die

Description

The CGH60008D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT). GaN has superior properties

compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift

velocity, and higher thermal conductivity. GaN HEMTs

offer greater power density and wider bandwidths

compared to Si and GaAs transistors.

PN: CGH60008D

Features

Applications

•

15 dB Typical Small Signal Gain at 4 GHz

12 dB Typical Small Signal Gain at 6 GHz

8 W Typical P_SAT@ 28 V Operation

5 W Typical P_SAT@ 20 V Operation

High Breakdown Voltage

High Temperature Operation

Up to 6 GHz Operation

High Eﬀiciency

•

2-Way Private Radio

Broadband Amplifiers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Packaging Information

•

Bare die are shipped in Gel-Pak® containers

Non-adhesive tacky membrane immobilizes die during shipment

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 1.2, 2022-11-23

For further information and support please visit:

https://www.macom.com/support

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