Datasheet > CGH55015F1

CGH55015F1

更新时间： 2024-09-26 01:11:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
13页	1226K
描述
15 W, 5500-5800 MHz, GaN HEMT for WiMAX

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CGH55015F1 数据手册

CGH55015F1 / CGH55015P1

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility

transistor (HEMT) designed speciﬁcally for high efﬁciency, high gain and wide bandwidth

capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX

and linear ampliﬁer applications. The transistor is available in both screw-down, ﬂange

and solder-down, pill packages. Based on appropriate external match adjustment, the

CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.

Typical Performance 5.5-5.8GHz (T_C= 25˚C)

Parameter

5.50 GHz

5.65 GHz

5.80 GHz

Units

Small Signal Gain

10.7

11.0

10.7

EVM at P_AVE= 23 dBm

EVM at P_AVE= 33 dBm

Drain Efﬁciency at P_AVE= 33 dBm

Input Return Loss

1.9

1.5

1.8

1.5

2.0

1.7

11.5

14.5

10.5

Note:

Measured in the CGH55015-AMP ampliﬁer circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Preﬁx,

64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,

PAR = 9.8 dB @ 0.01 % Probability on CCDF.

Features

•

5.5 - 5.8 GHz Operation

15 W Peak Power Capability

>10.5 dB Small Signal Gain

2 W P_AVE< 2.0 % EVM

25 % Efﬁciency at 2 W Average Power

Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications

Designed for Multi-carrier DOCSIS Applications

Subject to change without notice.

www.cree.com/wireless

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与CGH55015F1相关器件

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CGH55015P2	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
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